THE ARSENIC AND ANTIMONY DIFFUSION COEFFCIENTS IN GERMANIUM WITH THE FREE ELECTRON CONCENTRATION

Abstract

Obtaining effective electronic devices based on germanium requires knowledge of the diffusion characteristics of the dopants in this semiconductor. At most, a diffusion coefficient proportional to the square of the free electron concentration (n) has been used thus far to describe the diffusion of arsenic (As) and antimony(Sb) in germanium. By simulating experimental As and Sb diffusion profiles in Ge, this paper establishes the temperature dependence of the quadratic proportionality factors of the diffusion coefficients of arsenic and antimony in germanium with free electron concentration. By accounting for the quadratic proportionality between the diffusion coefficient and the free electron concentration, an accurate simulation is achieved.